SJ/T 2217-2014.Technical specification for phototransistor of silicon.1范围SJ/T 2217规定了硅光电晶体管(以下简称“器件”)光电特性、机械特性和环境性能的...
SJ/T 2658.3-2015.Measuring method for semiconductor infrared-emitting diode-Part 3: Reverse voltage and reverse current.1范围SJ/T 2658.3规定了半导体红外发射二极管(以下...
SJ/T 2658.2-2015.Measuring method for semiconductor infrared-emitting diode-Part 2: Forward voltage.1范围SJ/T 2658.2规定了半导体红外发射二极管(以下简称器件)正向...
SJ/T 2658.1-2015.Measuring method for semiconductor infrared-emitting diode-Part 1: General.1范围SJ/T 2658.1规定了对半导体红外发射二极管(以下简称器件)进行光电...
SJ/T 2318-2016.Al-Ni-Co permanent magnets for speaker.1范围SJ/T 2318规定了扬声器用铝镍钴系永磁体(以下简称永磁体)的要求、试验方法、检验规则和标志...
SJ/T 2658.8-2015.Measuring method for semiconductor infrared-emitting diode-Part 8: Radiant intensity.1范围SJ/T 2658.8规定了半导体红外发射二极管(以下简称器件)辐射...
SJ/T 2658.7-2015.Measuring method for semiconductor infrared-emitting diode-Part 7: Radiant flux.1范围SJ/T 2658.7规定了半导体红外发射二极管(以下简称器件)辐射通...
SJ/T 2658.6-2015.Measuring method for semiconductor infrared-emitting diode-Part 6: Radiant power.1范围SJ/T 2658.6规定了半导体红外发射二极管(以下简称器件)辐射功...
SJ/T 2658.5-2015.Measuring method for semiconductor infrared-emitting diode-Part 5:Series connection resistance.前言SJ/T 2658《半导体红外发射二极管测量方法》已经或...
SJ/T 2658.4-2015.Measuring method for semiconductor infrared- emitting diode-Part 4: Total capacitance.1范围SJ/T 2658.4规定了半导体红外发射二极管(以下简称器件)总...
