SJ/T 1833-2016.Semiconductor discrete devices Detail specification for silicon NPN low power switching transistor type 3DK103.引言本规范适用于3DK103型NPN硅小功率开关晶...
SJ/T 1832-2016.Semiconductor discrete devices Detail specification for silicon NPN low power switching transistor type 3DK102.引言本规范适用于3DK102型NPN硅小功率开关晶...
SJ/T 1830-2016.Semiconductor discrete devices Detail specification for silicon NPN low power switching transistor type 3DK101.引言本规范适用于3DK101型NPN硅小功率开关晶...
SJ/T 1826-2016.Semiconductor discrete devices Detail specification for silicon NPN low power switching transistor type 3DK100.4规范性引用文件下列文件对于本文件的应用...
SJ/T 1563-2014.Coaxial radio-frequency cables with solid polytetrafluoroethylene (PTFE) insulation.IEC 62230:2006电缆火花试验方法 (Electric cables , spark-test methods)ASTM ...
SJ/T 2089-2015.Type designation for electronic measuring instruments.1范围SJ/T 2089规定了电子测量仪器(以下简称仪器)的型号命名方法。SJ/T 2089适用于电子测...
SJ/T 2085-2016.Polyvinyl chloride insulated flexible wires and cables for interal wiring of equipment.1范围SJ/T 2085规定了聚氯乙烯绝缘安装用柔软电线电缆(以下简称...
SJ/T 1839-2016.Semiconductor discrete devices Detail specification for silicon NPN low power switching transistor type 3DK108.引言本规范适用于3DK108型NPN硅小功率开关晶...
SJ/T 1838-2016.Semiconductor discrete devices Detail specification for silicon NPN low power switching transistor type 3DK29.引言本规范适用于3DK29型NPN硅小功率开关晶体...
SJ/T 1834-2016.Semiconductor discrete devices Detail specification for silicon NPN low power switching transistor type 3DK104.前言本规范按照GB/T 1.1- - 2009给出的规则起草...
