SJ/T 11500-2015.Test method for measuring crystallographic orientation of monocrystalline silicon carbide.1范围SJ/T 11500规定了利用X射线衍射定向法测定碳化硅单晶晶...
SJ/T 11499-2015.Test method for measuring electrical properties of monocrystalline silicon carbide.1范围SJ/T 11499规定了碳化硅晶体材料导电类型、电阻率、迁移率、...
SJ/T 11497-2015.Test method for thermal stability testing of gallium arsenide wafers.1范围SJ/T 11497规定了半绝缘砷化镓(GaAs)晶片热稳定性的试验方法。SJ/T 11497适...
SJ/T 11496-2015.Determination of boron concentration in gallium arsenide by infrared absorption.1范围SJ/T 11496规定了在77 K时，用红外吸收法来测定砷化镓(GaAs)中替...
SJ/T 11505-2015.Sapphire single crystal polished wafers specification.1范围SJ/T 11505规定了衬底和红外探测器窗口用蓝宝石单晶抛光片的技术要求、测试方法...
SJ/T 11504-2015.Test method for measuring surface quality of polished monocrystalline silicon carbide.1范園SJ/T 11504规定了碳化硅单晶抛光片(以下简称“抛光片”)表...
SJ/T 11503-2015.Test methods for measuring surface roughness of polished monocrystalline silicon carbide wafers.1范围SJ/T 11503规定了测试碳化硅单晶抛光片表面粗糙度...
SJ/T 11502-2015.Specification for polished monocrystalline silicon carbide wafers.1范围SJ/T 11502规定了碳化硅单晶抛光片的术语和定义、牌号.要求.试验方法、检...
SJ/T 11501-2015.Test method for determining crystal type of monocrystalline silicon carbide.1范围SJ/T 11501规定了利用拉曼光谱测定碳化硅单晶结晶类型的方法。...
SJ/T 11510-2015.Aluminum etching solution for LCD.1范围SJ/T 11510规定了液晶显示器用铝腐蚀液的术语、性状、技术要求、试验方法、检验规则和包装、标...
