SJ 20274-1993.Semiconductor discrete devices Detail specificion for silicon switching diode for type 2CK84.1范围1.1主题内容SJ 20274规定了2CK84型硅开关二极管(以下简称...
SJ 20059-1992.Semiconductor discrete device Detail specification for silicon NPN high - frequency low - power transistor of type 3DG111 and 3DG120.1范围1.1主题内容SJ 20059规定...
SJ 20060-1992.Semiconductor discrete device Detail specification for sllcon NPN high-frequency low-power transistor of type 3DG120.1范围1.1主题内容SJ 20060规定了3DG120型NP...
SJ 20061-1992.Semiconductor discrete device Detail specification for silicon N-channel deplition mode field-effect transistor of type CS146.1范围1.1主题内容SJ 20061规定了CS...
SJ 20062-1992.Semiconductor discrte device Detail specification for silicon NPN ultra-high frequency low-noise difference match transistor of type 3DG210.1范围1.1主题内容SJ 20...
SJ 20065-1992.Semiconductor discrete device Detail specification for type QL72 silicon three phase full wave bridge rectifier.1范围1.1主题内容SJ 20065规定了电源设备用的...
SJ 20054-1992.Semiconductor discrete device Detail specification for silicon NPN low power switching transistor of type 3DK101 ,3DK102 ,3DK103,3DK104 and 3DK105.1范围1.1主题内容...
SJ 20055-1992.Semiconductor discrete device Detail specification for silicon NPN low power switching transistor of type 3DK102.1范围1.1主题内容SJ 20055规定了3DK102型NPN硅小...
SJ 20056-1992.Semiconduclor discrele device Delail specification for silicon NPN low power switching transistor of type 3DK 1031范围1.1主题内容SJ 20056规定了3DK103型NPN硅小...
SJ 20057-1992.Semiconductor discrete deviceDetail specification for silicon NPN low power switching transistor of type 3DK 104.1范围1.1主题内容SJ 20057规定了3DK104型NPN硅小...
