SJ 20155-1992.General specification for radio frequency radiation absorber (microwave absorbing material).1范围1.1主题内容SJ 20155规定了对射频(RF)辐射吸收体(微波吸...
SJ 20163-1992.Detail specification of Jμ8086 microprocessor for semiconductor integrated circuits.1范围1.1主题内容SJ 20163规定了半导体集成电路Ju8086型微处理器(以...
SJ 20164-1992.Electron tube Detail specification for radiation counter tubes of types J305βY ,J405Y.1范围1.1主题内容SJ 20164规定了探测剂量率为0.02~0.12cGy/h的Y射线及...
SJ 20162-1992.Detail specification for types JT54LS283 4-bit binary FULL ADDERS with fast carry of LS-TTL semi conductor integr ated circuits.1范围1.1主题内容SJ 20162规定了半...
SJ 20161-1992.Detail specification for types JT54LS273、JT54LS373、JT54LS374 and JT54LS377 cascadable FLIP-FLOPS ofLS-TTL semiconductor integrated circuits.1范围1.1主题内容S...
SJ 20160-1992.Detail specification for types JT54S194 and JT54S195 SHIFT RFGISTERS of S-TTL semiconductor integrated circuits.1范围1.1主题内容SJ 20160规定了半导体集成电...
SJ 20171-1992.Semiconductor discrete device Detail specification for type 3DK51 power switching transistor.2引用文件GB 4587-84双极型晶体管 测试方法GB 7581-87半导体分...
SJ 20170-1992.Semiconductor discrete device Detail specification for type 3DK37 power switching transistor.1范围1.1主题内容SJ 20170规定了3DK37B~H型功率开关晶体管的详...
SJ 20169-1992.Semiconductor discrete device Detail specification for type 3DK36 power switching transistor.1范围1.1主题内容SJ 20169规定了3DK36B~H型功率开关晶体管的详...
SJ 20168-1992.Semiconductor discrete device Detail specification for types 3DK12、36、37、38、51 and 3CK38 power switching transistors.1范围1.1主题内容SJ 20168规定了3DK...
