SJ/T 2658.13-2015.Measuring method for semiconductor infrared-emitting diode-Part 13: Temperature coefficient for radiant power.1范围SJ/T 2658.13规定了半导体红外发射二极...
SJ/T 2658.12-2015.Measuring method for semiconductor infrared- emitting diode Part 12: Peak-emission wavelength and spectral radiant bandwidth.1范围SJ/T 2658.12规定了半导体红...
SJ/T 2658.11-2015.Measuring method for semiconductor infrared-emitting diode-Part 11: Response time.1范围SJ/T 2658.11规定了半导体红外发射二极管(以下简称器件)响应...
SJ/T 2658.10-2015.Measuring method for semiconductor infrared-emitting diode-Part 10: Modulation bandwidth.1范围SJ/T 2658.10规定了半导体红外发射二极管(以下简称器件...
SJ/T 2658.9-2015.Measuring method for semiconductor infrared-emitting diode-Part 9: Spatial distribution of radiant intensity and half-intensity angle.1范围SJ/T 2658.9规定了半导...
SJ/T 10739-1996.General principles of measuring methods of MOS random access memory for semiconductor integrated circuits.SJ/T 10739规定了半导体集成电路MOS随机存储器(以...
SJ/T 10678-1995.Bismuth trioxide powder for electrinic industry.1主题内容与适用范圈1.1 主题内容SJ/T 10678规定了敏感元件用氧化铋粉的技术要求、试验方法...
SJ/T 10656-1995.External interface for short wave single - sideband communication equipment.1范围SJ/T 10656规定了短波单边带通信设备(以下简称“通信设备")的外部...
SJ/T 10655-1995.Inspecting rule for short wave single-sideband communication equipment.1范围SJ/T 10655规定了短波单边带通信设备质量检验的具体程序和方法,本标...
SJ/T 10653-1995.Environmental requirements and test methods,for short wave single sideband communication equipment.1范围SJ/T 10653规定了短波单边带通信设备对气候和机...