SJ 20185-1992.Semiconductor discrete device Detail specification for silicon voltage reference diodes for types 2DW232~236.1范围1.1主题内容SJ 20185规定了2DW232~ 2DW236型硅电...
SJ 20184-1992.Semiconductor discrete device Detail specification for field-effect transistor of types CS3821,3822,3823.1范围1.1主题内容SJ 20184规定了CS3821、CS3822和CS382...
SJ 20181-1992.Semiconductor discrete device Detail specification for reverse-blocking thyristor for type 3CT107.1范围1.1主题内容SJ 20181规定了3CT107型反向阻断闸流晶体...
SJ 20179-1992.Semiconductor discrete device Detail specification for reverse-blocking thyristorfor types 3CT103, 3CT105,3CT107 ,3CT682,683, 685~692 and 3CT5206.1范围1.1主题内容...
SJ 20186-1992.semiconductor discrete device Detail specification for silicon voltage regulator diodes for types 2CW2970~3015,2CW3016~3051.1范围1.1主题内容SJ 20186规定了2CW2...
SJ 20174-1992.Semiconductor discrete device Detail specification for NPN silicon low-power switching transistor of types 3DK2221、3DK2221A、3DK2222 and 3DK222A.1范围1.1主题内容...
SJ 20178-1992.Semiconductor discrete device Detail specification for type 3CK38 power switching transistor.1范围1.1主题内容SJ 20178规定了3CK38B~H型功率开关晶体管的详...
SJ 20177-1992.Semiconductor discrete device Detail specification for PNP silicon low-power switching transistor for types 3CK 3634~3CK 3637.1范围1.1主题内容SJ 20177规定了3C...
SJ 20175-1992.Semiconductor discrete device Detail specification for NPN silicon ultra-high frequency low-power transistor of type 3DG918.1范围1.1主题内容SJ 20175规定了3DG9...
SJ 20176-1992.Semiconductor discrete device Detail specification for NPN silicon low-power high-reverse- voltage transistor of types 3DG3439 and 3DG3440.1范围1.1主题内容SJ 201...
