SJ/T 11477-2014.IP core deliverables specification.1范围SJ/T 11477规定了数字IP核交付的主要内容，包括文档、设计、验证、测试、模型等方面的交付内容...
SJ/T 11475-2014.UV curable coating for optical fibre.1范围SJ/T 11475规定了通信用双涂层石英玻璃光纤紫外光(UV)固化光纤涂料的分类、技术要求、检验方法...
SJ/T 11462.3-2016.Encoders for use in electronic equipment Part 3:Sectional specification Absloute rotary encoders.1范围SJ/T 11462.3规定了绝对型旋转编码器(以下简称编...
SJ/T 11462.2-2016.Encoders for use in electronic equipment Part 2:Sectional specification Incremental rotary encoders.1范围SJ/T 11462.2规定了增量型旋转编码器(以下简称...
SJ/T 11462.2.1-2016.Encoders for use in electronic equipment Part 2-1:Blank detail specification incremental rotary encoders Assessment level EZ.引言空白详细规范空白详细规...
SJ/T 11478-2014.IP core quality evaluation.1范围SJ/T 11478规定的是对IP核质量的主要方面，包括IP核的文档质量、IP核的设计质量、IP核的模型质量、IP核...
SJ/T 11479-2014.IP documentation guide.1范围SJ/T 11479规定了数字IP核相关文档结构方面的内容，包括IP核简介、功能规范、设计手册、功能及物理验证...
SJ/T 11488-2015.Test method for measuring resistivity, hall coefficient and determining hall mobility in semi-insulating GaAs single crystals.1范围SJ/T 11488规定了半绝缘砷化...
SJ/T 11489-2015.Test method for measuring etch pit density(EPD) in low dislocation density indium phosphide wafers.1范围SJ/T 11489规定了低位错密度磷化铟(InP) 抛光片腐...
SJ/T 11490-2015.Test method for measuring etch pit density(EPD) in low dislocation density gallium arsenide wafers.1范围SJ/T 11490规定了低位错密度砷化镓(GaAs)抛光片腐...
