SJ 20986-2008.General specification for bulk acoustoptic device.1范围SJ 20986规定了军用体波声光器件的通用要求、质量保证规定、测试和试验方法等。SJ ...
SJ 50033/174-2007.Semiconductro discrete devices Detail specification for type 3DA521 silicon microwave pulse power transistor.1范围SJ 50033/174规定了3DA521型硅微波脉冲功率...
SJ 50033/176-2007.Semiconductor discrete devicesDetail specification for type 3DA523 silicon microwave pulse power transistor.1范围SJ 50033/176规定了3DA523型硅微波脉冲功率...
SJ 50973/35-2008.Cables，radio frequency， flexible, solid PTFE dielectric,type SFB-50-7-53、 SFB-50-7-54，detail specification for.1范围SJ 50973/35规定了SFB-50-7-53、SFB-...
SJ 20794/1-2007.Resistor network, fixed, fiIm, surface mount, established reliability,style RNK5084 detail specification for.1范围SJ 20794/1规定了RNK5084型有可靠性指标的表...
SJ 50733/4-2004.Capacitors, fixed electrolytic (non-solid electrolyte), tantalum,hermetically sealed, established reliability,style CAK356, detail specification for.1范围SJ 50733/...
SJ 50973/37-2008.Cables，radio frequency， flexible, solid PTFE dielectric,type SFF-50-7-51，detail specification for.1范围SJ 50973/37规定了SFF- 50-7-51型实心聚四氟乙烯...
SJ 20979-2007.General specification for self-generating set of military vehicle.1范围SJ 20979规定了军用汽车自发电系统(以下简称“自发电系统”)的技术要求、...
SJ 50033/171-2007.Semiconductor discrete devicesDetail specification for type 3DA518 silicon microwave pulse power transistor.1范围SJ 50033/171规定了3DA518型硅微波脉冲功率...
SJ 50033/173-2007.Semiconductor discrete devices Detail specification for type 3DA520 silicon microwave pulse power transistor.1范围SJ 50033/173规定了3DA520型硅微波脉冲功率...
